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Application：

Applied to the polishing process of SiC wafers of third-generation semiconductor materials, SiC material has super-hard properties, and conventional silicon oxide polishing slurry has the problem of slow polishing efficiency. This product has a good performance in the polishing of silicon carbide on the Si surface. It has an efficient removal rate and has fewer defects on the surface of the SiC after polishing. At the same time, good surface quality can be obtained when polishing C-surface of SiC, so as to ensure that the polished workpiece has a higher polishing efficiency and yield, and improve the competitiveness of customers' products.

Technical parameter: